Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices
Activation energy, bipolar resistance switching behavior, and the electrical conduction transport properties of ITOX:SiO2 thin film resistive random access memory (RRAM) devices were observed and discussed.The ITOX:SiO2 thin films were prepared using a co-sputtering deposition method on the TiN/Si substrate.For the RRAM device structure fabrication